The $2.5 Billion rover of NASA, Curiosity is all set to take the tiniest detail of the planet Mars. The rover is designed to be highly precise in observing its ambient conditions including atmospheric pressure and the gravitational force. For this purpose, it’s Instrumental Control Unit or the ICU has been equipped with pressure sensors. These sensors will help in detecting the Dust Devils that are a characteristic of the planet and will also detail with the concentration of various gases in the atmosphere at various points. Let’s have a look on what makes a pressure sensor capable enough to perform such specific tasks and where else it can be used.
Month: December 2014
Hall Effect Sensors
Magnetic sensors are solid state devices that are becoming more and more popular because they can be used in many different types of application such as sensing position, velocity or directional movement. They are also a popular choice of sensor for the electronics designer due to their non-contact wear free operation, their low maintenance, robust design and as sealed hall effect devices are immune to vibration, dust and water.
One of the main uses of Magnetic Sensors is in automotive systems for the sensing of position, distance and speed. For example, the angular position of the crank shaft for the firing angle of the spark plugs, the position of the car seats and seat belts for air-bag control or wheel speed detection for the anti-lock braking system, (ABS).
Magnetic sensors are designed to respond to a wide range of positive and negative magnetic fields in a variety of different applications and one type of magnet sensor whose output signal is a function of magnetic field density around it is called the Hall Effect Sensor.
Hall Effect Sensors are devices which are activated by an external magnetic field. We know that a magnetic field has two important characteristics flux density, (B) and polarity (North and South Poles). The output signal from a Hall effect sensor is the function of magnetic field density around the device. When the magnetic flux density around the sensor exceeds a certain pre-set threshold, the sensor detects it and generates an output voltage called the Hall Voltage, VH. Consider the diagram below.
Hall Effect Sensor Principals
Hall Effect Sensors consist basically of a thin piece of rectangular p-type semiconductor material such as gallium arsenide (GaAs), indium antimonide (InSb) or indium arsenide (InAs) passing a continuous current through itself. When the device is placed within a magnetic field, the magnetic flux lines exert a force on the semiconductor material which deflects the charge carriers, electrons and holes, to either side of the semiconductor slab. This movement of charge carriers is a result of the magnetic force they experience passing through the semiconductor material.
As these electrons and holes move side wards a potential difference is produced between the two sides of the semiconductor material by the build-up of these charge carriers. Then the movement of electrons through the semiconductor material is affected by the presence of an external magnetic field which is at right angles to it and this effect is greater in a flat rectangular shaped material.
The effect of generating a measurable voltage by using a magnetic field is called the Hall Effectafter Edwin Hall who discovered it back in the 1870’s with the basic physical principle underlying the Hall effect being Lorentz force. To generate a potential difference across the device the magnetic flux lines must be perpendicular, (90o) to the flow of current and be of the correct polarity, generally a south pole.
The Hall effect provides information regarding the type of magnetic pole and magnitude of the magnetic field. For example, a south pole would cause the device to produce a voltage output while a north pole would have no effect. Generally, Hall Effect sensors and switches are designed to be in the “OFF”, (open circuit condition) when there is no magnetic field present. They only turn “ON”, (closed circuit condition) when subjected to a magnetic field of sufficient strength and polarity.
Hall Effect Magnetic Sensor
The output voltage, called the Hall voltage, (VH) of the basic Hall Element is directly proportional to the strength of the magnetic field passing through the semiconductor material (output ∝ H). This output voltage can be quite small, only a few microvolts even when subjected to strong magnetic fields so most commercially available Hall effect devices are manufactured with built-in DC amplifiers, logic switching circuits and voltage regulators to improve the sensors sensitivity, hysteresis and output voltage. This also allows the Hall effect sensor to operate over a wider range of power supplies and magnetic field conditions.
The Hall Effect Sensor
Hall Effect Sensors are available with either linear or digital outputs. The output signal for linear (analogue) sensors is taken directly from the output of the operational amplifier with the output voltage being directly proportional to the magnetic field passing through the Hall sensor. This output Hall voltage is given as:
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Linear or analogue sensors give a continuous voltage output that increases with a strong magnetic field and decreases with a weak magnetic field. In linear output Hall effect sensors, as the strength of the magnetic field increases the output signal from the amplifier will also increase until it begins to saturate by the limits imposed on it by the power supply. Any additional increase in the magnetic field will have no effect on the output but drive it more into saturation.
Digital output sensors on the other hand have a Schmitt-trigger with built in hysteresis connected to the op-amp. When the magnetic flux passing through the Hall sensor exceeds a pre-set value the output from the device switches quickly between its “OFF” condition to an “ON” condition without any type of contact bounce. This built-in hysteresis eliminates any oscillation of the output signal as the sensor moves in and out of the magnetic field. Then digital output sensors have just two states, “ON” and “OFF”.
There are two basic types of digital Hall effect sensor, Bipolar and Unipolar. Bipolar sensors require a positive magnetic field (south pole) to operate them and a negative field (north pole) to release them while unipolar sensors require only a single magnetic south pole to both operate and release them as they move in and out of the magnetic field.
Most Hall effect devices can not directly switch large electrical loads as their output drive capabilities are very small around 10 to 20mA. For large current loads an open-collector (current sinking) NPN Transistor is added to the output.
This transistor operates in its saturated region as a NPN sink switch which shorts the output terminal to ground whenever the applied flux density is higher than that of the “ON” pre-set point.
The output switching transistor can be either an open emitter transistor, open collector transistor configuration or both providing a push-pull output type configuration that can sink enough current to directly drive many loads, including relays, motors, LEDs, and lamps.
Hall Effect Applications
Hall effect sensors are activated by a magnetic field and in many applications the device can be operated by a single permanent magnet attached to a moving shaft or device. There are many different types of magnet movements, such as “Head-on”, “Sideways”, “Push-pull” or “Push-push” etc sensing movements. Which every type of configuration is used, to ensure maximum sensitivity the magnetic lines of flux must always be perpendicular to the sensing area of the device and must be of the correct polarity.
Also to ensure linearity, high field strength magnets are required that produce a large change in field strength for the required movement. There are several possible paths of motion for detecting a magnetic field, and below are two of the more common sensing configurations using a single magnet: Head-on Detection and Sideways Detection.
Head-on Detection
As its name implies, “head-on detection” requires that the magnetic field is perpendicular to the hall effect sensing device and that for detection, it approaches the sensor straight on towards the active face. A sort of “head-on” approach.
This head-on approach generates an output signal,VH which in the linear devices represents the strength of the magnetic field, the magnetic flux density, as a function of distance away from the hall effect sensor. The nearer and therefore the stronger the magnetic field, the greater the output voltage and vice versa.
Linear devices can also differentiate between positive and negative magnetic fields. Non-linear devices can be made to trigger the output “ON” at a pre-set air gap distance away from the magnet for indicating positional detection.
Sideways Detection
The second sensing configuration is “sideways detection”. This requires moving the magnet across the face of the Hall effect element in a sideways motion.
Sideways or slide-by detection is useful for detecting the presence of a magnetic field as it moves across the face of the Hall element within a fixed air gap distance for example, counting rotational magnets or the speed of rotation of motors.
Depending upon the position of the magnetic field as it passes by the zero field centre line of the sensor, a linear output voltage representing both a positive and a negative output can be produced. This allows for directional movement detection which can be vertical as well as horizontal.
There are many different applications for Hall Effect Sensors especially as proximity sensors. They can be used instead of optical and light sensors were the environmental conditions consist of water, vibration, dirt or oil such as in automotive applications. Hall effect devices can also be used for current sensing.
We know from the previous tutorials that when a current passes through a conductor, a circular electromagnetic field is produced around it. By placing the Hall sensor next to the conductor, electrical currents from a few milliamps into thousands of amperes can be measured from the generated magnetic field without the need of large or expensive transformers and coils.
As well as detecting the presence or absence of magnets and magnetic fields, Hall effect sensors can also be used to detect ferromagnetic materials such as iron and steel by placing a small permanent “biasing” magnet behind the active area of the device. The sensor now sits in a permanent and static magnetic field, and any change or disturbance to this magnetic field by the introduction of a ferrous material will be detected with sensitivities as low as mV/G possible.
There are many different ways to interface Hall effect sensors to electrical and electronic circuits depending upon the type of device, whether digital or linear. One very simple and easy to construct example is using a Light Emitting Diode as shown below.
Positional Detector
This head-on positional detector will be “OFF” when there is no magnetic field present, (0 gauss). When the permanent magnets south pole (positive gauss) is moved perpendicular towards the active area of the Hall effect sensor the device turns “ON” and lights the LED. Once switched “ON” the Hall effect sensor stays “ON”.
To turn the device and therefore the LED “OFF” the magnetic field must be reduced to below the release point for unipolar sensors or exposed to a magnetic north pole (negative gauss) for bipolar sensors. The LED can be replaced with a larger power transistor if the output of the Hall Effect Sensor is required to switch larger current loads.
Alcohol Gas Sensor
MQ3 Gas Sensor
This is an alcohol sensor from futurlec, named MQ-3, which detects ethanol in the air. It is one of the straightforward gas sensors so it works almost the same way with other gas sensors. Typically, it is used as part of the breathalyzers or breath testers for the detection of ethanol in the human breath.
Datasheet
Here is a datasheet, only 2 pages. It shows features, applications, specifications and configurations etc. It is a pretty simple datasheet. Since this datasheet was not prepared in English, the translation is not very accurate.
How it looks like :
Basically, it has 6pins, the cover and the body. Even though it has 6 pins, you can use only 4 of them. Two of them are for the heating system, which I call H and the other 2 are for connecting power and ground, which I called A and B.
If you look at the inside of the sensor, you will find the little tube. Basically, this tube is a heating system that is made of aluminum oxide and tin dioxide and inside of it there are heater coils, which practically produce the heat. And you can also find 6 pins. 2 pins that I called Pin H are connected to the heater coils and the other ones are connected to the tube.
How it works :
How does it work? The core system is the cube. As you can see in this cross-sectional view, basically, it is an Alumina tube cover by SnO2, which is tin dioxide. And between them there is an Aurum electrode, the black one. And also you can see how the wires are connected. So, why do we need them? Basically, the alumina tube and the coils are the heating system, the yellow, brown parts and the coils in the picture.
5. Working Process :
If the coil is heated up,
SnO2 ceramics will become the semi – conductor, so there are more movable electrons, which means that it is ready tomake more current flow.
Then, when the alcohol molecules in the air meet the electrode that is between alumina and tin dioxide, ethanol burns into acetic acid then more current is produced. So the more alcohol molecules there are, the more current we will get. Because of this current change, we get the different values from the sensor.
Microcontroller Connections
Here is the schematic. It is pretty simple. First, you can use 5v. And as you can see one of H pins goes to the power and the other one is connected to the ground. And the pin A is connected between the power and the pin H and the pin B is goes to the microcontroller. Also between the ground and the Arduino, you need the resistor. Before you connect the resistor if you use the pot, you can tune the resistor for getting more accurate values. In the datasheet they say you can used 100k om to 470k om.
Typical Behavior
If you blow, it will react. Depending on the environment, it gives you little bit of different values. But in my case, it gives me 200 as the lowest value and 1000 as the highest value. And when it detects the alcohol in the air, actually it is pretty sensitive, the value gets higher very quickly but you have to wait for about 1 to 5 minutes to reset it. So that means getting values is fast but resetting is so slow. And the sensitivity of this sensor is affected by time span.
Ultrasonic Sensors
Domain
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Parameter
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Applications
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Time
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Tile-of-Flight, Velocity
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Density, Thickness, Flaw Detection, Anisotropy, Robotics, Remote Sensing etc.
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Attenuation
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Fluctuations in reflected and Transmitted Signals
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Defect characterization, microstructures, interface analysis
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Frequency
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Ultrasonic Spectroscopy
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Microstructure, grain size, porosity, phase analysis.
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Image
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Time-of-Flight, velocity, attenuation mapping in Raster C-Scan or SARs
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Surface and internal Defect imaging, density, velocity, 2D and 3D imaging.
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Light Sensors
Light Sensors
A Light Sensor generates an output signal indicating the intensity of light by measuring the radiant energy that exists in a very narrow range of frequencies basically called “light”, and which ranges in frequency from “Infra-red” to “Visible” up to “Ultraviolet” light spectrum.
The Light Sensor is a passive devices that convert this “light energy” whether visible or in the infra-red parts of the spectrum into an electrical signal output. Light sensors are more commonly known as “Photoelectric Devices” or “Photo Sensors” because the convert light energy (photons) into electricity (electrons).
Photoelectric devices can be grouped into two main categories, those which generate electricity when illuminated, such as Photo-voltaics or Photo-emissives etc, and those which change their electrical properties in some way such as Photo-resistors or Photo-conductors. This leads to the following classification of devices.
- • Photo-emissive Cells – These are photodevices which release free electrons from a light sensitive material such as caesium when struck by a photon of sufficient energy. The amount of energy the photons have depends on the frequency of the light and the higher the frequency, the more energy the photons have converting light energy into electrical energy.
- • Photo-conductive Cells – These photodevices vary their electrical resistance when subjected to light. Photoconductivity results from light hitting a semiconductor material which controls the current flow through it. Thus, more light increase the current for a given applied voltage. The most common photoconductive material is Cadmium Sulphide used in LDR photocells.
- • Photo-voltaic Cells – These photodevices generate an emf in proportion to the radiant light energy received and is similar in effect to photoconductivity. Light energy falls on to two semiconductor materials sandwiched together creating a voltage of approximately 0.5V. The most common photovoltaic material is Selenium used in solar cells.
- • Photo-junction Devices – These photodevices are mainly true semiconductor devices such as the photodiode or phototransistor which use light to control the flow of electrons and holes across their PN-junction. Photojunction devices are specifically designed for detector application and light penetration with their spectral response tuned to the wavelength of incident light.
The Photoconductive Cell
A Photoconductive light sensor does not produce electricity but simply changes its physical properties when subjected to light energy. The most common type of photoconductive device is thePhotoresistor which changes its electrical resistance in response to changes in the light intensity.
Photoresistors are Semiconductor devices that use light energy to control the flow of electrons, and hence the current flowing through them. The commonly used Photoconductive Cell is called the Light Dependent Resistor or LDR.
The Light Dependent Resistor
As its name implies, the Light Dependent Resistor (LDR) is made from a piece of exposed semiconductor material such as cadmium sulphide that changes its electrical resistance from several thousand Ohms in the dark to only a few hundred Ohms when light falls upon it by creating hole-electron pairs in the material.
The net effect is an improvement in its conductivity with a decrease in resistance for an increase in illumination. Also, photoresistive cells have a long response time requiring many seconds to respond to a change in the light intensity.
Materials used as the semiconductor substrate include, lead sulphide (PbS), lead selenide (PbSe), indium antimonide (InSb) which detect light in the infra-red range with the most commonly used of all photoresistive light sensors being Cadmium Sulphide (Cds).
Cadmium sulphide is used in the manufacture of photoconductive cells because its spectral response curve closely matches that of the human eye and can even be controlled using a simple torch as a light source. Typically then, it has a peak sensitivity wavelength (λp) of about 560nm to 600nm in the visible spectral range.
The Light Dependent Resistor Cell
The most commonly used photoresistive light sensor is the ORP12 Cadmium Sulphide photoconductive cell. This light dependent resistor has a spectral response of about 610nm in the yellow to orange region of light. The resistance of the cell when unilluminated (dark resistance) is very high at about 10MΩ’s which falls to about 100Ω’s when fully illuminated (lit resistance).
To increase the dark resistance and therefore reduce the dark current, the resistive path forms a zigzag pattern across the ceramic substrate. The CdS photocell is a very low cost device often used in auto dimming, darkness or twilight detection for turning the street lights “ON” and “OFF”, and for photographic exposure meter type applications.
Connecting a light dependant resistor in series with a standard resistor like this across a single DC supply voltage has one major advantage, a different voltage will appear at their junction for different levels of light.
The amount of voltage drop across series resistor,R2 is determined by the resistive value of the light dependant resistor, RLDR. This ability to generate different voltages produces a very handy circuit called a “Potential Divider” or Voltage Divider Network.
As we know, the current through a series circuit is common and as the LDR changes its resistive value due to the light intensity, the voltage present at VOUT will be determined by the voltage divider formula. An LDR’s resistance, RLDR can vary from about 100Ω’s in the sun light, to over 10MΩ’s in absolute darkness with this variation of resistance being converted into a voltage variation at VOUTas shown.
One simple use of a Light Dependent Resistor, is as a light sensitive switch as shown below.
This basic light sensor circuit is of a relay output light activated switch. A potential divider circuit is formed between the photoresistor, LDR and the resistor R1. When no light is present ie in darkness, the resistance of the LDR is very high in the Megaohms (MΩ’s) range so zero base bias is applied to the transistor TR1 and the relay is de-energised or “OFF”.
As the light level increases the resistance of the LDRstarts to decrease causing the base bias voltage at V1 to rise. At some point determined by the potential divider network formed with resistor R1, the base bias voltage is high enough to turn the transistor TR1 “ON” and thus activate the relay which in turn is used to control some external circuitry. As the light level falls back to darkness again the resistance of the LDR increases causing the base voltage of the transistor to decrease, turning the transistor and relay “OFF” at a fixed light level determined again by the potential divider network.
By replacing the fixed resistor R1 with a potentiometer VR1, the point at which the relay turns “ON” or “OFF” can be pre-set to a particular light level. This type of simple circuit shown above has a fairly low sensitivity and its switching point may not be consistent due to variations in either temperature or the supply voltage. A more sensitive precision light activated circuit can be easily made by incorporating the LDR into a “Wheatstone Bridge” arrangement and replacing the transistor with anOperational Amplifier as shown.
Light Level Sensing Circuit
In this basic dark sensing circuit, the light dependent resistor LDR1 and the potentiometer VR1 form one adjustable arm of a simple resistance bridge network, also known commonly as a Wheatstone bridge, while the two fixed resistors R1 and R2 form the other arm. Both sides of the bridge form potential divider networks across the supply voltage whose outputs V1 and V2 are connected to the non-inverting and inverting voltage inputs respectively of the operational amplifier.
The operational amplifier is configured as a Differential Amplifier also known as a voltage comparator with feedback whose output voltage condition is determined by the difference between the two input signals or voltages, V1 and V2. The resistor combination R1 and R2 form a fixed voltage reference at input V2, set by the ratio of the two resistors. The LDR – VR1 combination provides a variable voltage input V1 proportional to the light level being detected by the photoresistor.
As with the previous circuit the output from the operational amplifier is used to control a relay, which is protected by a free wheel diode, D1. When the light level sensed by the LDR and its output voltage falls below the reference voltage set at V2 the output from the op-amp changes state activating the relay and switching the connected load.
Likewise as the light level increases the output will switch back turning “OFF” the relay. The hysteresis of the two switching points is set by the feedback resistor Rf can be chosen to give any suitable voltage gain of the amplifier.
The operation of this type of light sensor circuit can also be reversed to switch the relay “ON” when the light level exceeds the reference voltage level and vice versa by reversing the positions of the light sensor LDR and the potentiometer VR1. The potentiometer can be used to “pre-set” the switching point of the differential amplifier to any particular light level making it ideal as a simple light sensor project circuit.
Photojunction Devices
Photojunction Devices are basically PN-Junction light sensors or detectors made from silicon semiconductor PN-junctions which are sensitive to light and which can detect both visible light and infra-red light levels. Photo-junction devices are specifically made for sensing light and this class of photoelectric light sensors include the Photodiode and the Phototransistor.
The Photodiode.
The construction of the Photodiode light sensor is similar to that of a conventional PN-junction diode except that the diodes outer casing is either transparent or has a clear lens to focus the light onto the PN junction for increased sensitivity. The junction will respond to light particularly longer wavelengths such as red and infra-red rather than visible light.
This characteristic can be a problem for diodes with transparent or glass bead bodies such as the 1N4148 signal diode. LED’s can also be used as photodiodes as they can both emit and detect light from their junction. All PN-junctions are light sensitive and can be used in a photo-conductive unbiased voltage mode with the PN-junction of the photodiode always “Reverse Biased” so that only the diodes leakage or dark current can flow.
The current-voltage characteristic (I/V Curves) of a photodiode with no light on its junction (dark mode) is very similar to a normal signal or rectifying diode. When the photodiode is forward biased, there is an exponential increase in the current, the same as for a normal diode. When a reverse bias is applied, a small reverse saturation current appears which causes an increase of the depletion region, which is the sensitive part of the junction. Photodiodes can also be connected in a current mode using a fixed bias voltage across the junction. The current mode is very linear over a wide range.
Photo-diode Construction and Characteristics
When used as a light sensor, a photodiodes dark current (0 lux) is about 10uA for geranium and 1uA for silicon type diodes. When light falls upon the junction more hole/electron pairs are formed and the leakage current increases. This leakage current increases as the illumination of the junction increases.
Thus, the photodiodes current is directly proportional to light intensity falling onto the PN-junction. One main advantage of photodiodes when used as light sensors is their fast response to changes in the light levels, but one disadvantage of this type of photodevice is the relatively small current flow even when fully lit.
The following circuit shows a photo-current-to-voltage converter circuit using an operational amplifier as the amplifying device. The output voltage (Vout) is given as Vout = Ip × Rf and which is proportional to the light intensity characteristics of the photodiode.
This type of circuit also utilizes the characteristics of an operational amplifier with two input terminals at about zero voltage to operate the photodiode without bias. This zero-bias op-amp configuration gives a high impedance loading to the photodiode resulting in less influence by dark current and a wider linear range of the photocurrent relative to the radiant light intensity. CapacitorCf is used to prevent oscillation or gain peaking and to set the output bandwidth (1/2πRC).
Photo-diode Amplifier Circuit
Photodiodes are very versatile light sensors that can turn its current flow both “ON” and “OFF” in nanoseconds and are commonly used in cameras, light meters, CD and DVD-ROM drives, TV remote controls, scanners, fax machines and copiers etc, and when integrated into operational amplifier circuits as infrared spectrum detectors for fibre optic communications, burglar alarm motion detection circuits and numerous imaging, laser scanning and positioning systems etc.
The Phototransistor
An alternative photo-junction device to the photodiode is the Phototransistor which is basically a photodiode with amplification. The Phototransistor light sensor has its collector-base PN-junction reverse biased exposing it to the radiant light source.
Phototransistors operate the same as the photodiode except that they can provide current gain and are much more sensitive than the photodiode with currents are 50 to 100 times greater than that of the standard photodiode and any normal transistor can be easily converted into a phototransistor light sensor by connecting a photodiode between the collector and base.
Phototransistors consist mainly of a bipolar NPN Transistor with its large base region electrically unconnected, although some phototransistors allow a base connection to control the sensitivity, and which uses photons of light to generate a base current which in turn causes a collector to emitter current to flow. Most phototransistors are NPN types whose outer casing is either transparent or has a clear lens to focus the light onto the base junction for increased sensitivity.
Photo-transistor Construction and Characteristics
In the NPN transistor the collector is biased positively with respect to the emitter so that the base/collector junction is reverse biased. therefore, with no light on the junction normal leakage or dark current flows which is very small. When light falls on the base more electron/hole pairs are formed in this region and the current produced by this action is amplified by the transistor.
Usually the sensitivity of a phototransistor is a function of the DC current gain of the transistor. Therefore, the overall sensitivity is a function of collector current and can be controlled by connecting a resistance between the base and the emitter but for very high sensitivity optocoupler type applications, Darlington phototransistors are generally used.
Photodarlington transistors use a second bipolar NPN transistor to provide additional amplification or when higher sensitivity of a photodetector is required due to low light levels or selective sensitivity, but its response is slower than that of an ordinary NPN phototransistor.
Photo darlington devices consist of a normal phototransistor whose emitter output is coupled to the base of a larger bipolar NPN transistor. Because a darlington transistor configuration gives a current gain equal to a product of the current gains of two individual transistors, a photodarlington device produces a very sensitive detector.
Typical applications of Phototransistors light sensors are in opto-isolators, slotted opto switches, light beam sensors, fibre optics and TV type remote controls, etc. Infrared filters are sometimes required when detecting visible light.
Another type of photojunction semiconductor light sensor worth a mention is the Photo-thyristor. This is a light activated thyristor or Silicon Controlled Rectifier, SCR that can be used as a light activated switch in AC applications. However their sensitivity is usually very low compared to equivalent photodiodes or phototransistors.
To help increase their sensitivity to light, photo-thyristors are made thinner around the gate junction. The downside to this process is that it limits the amount of anode current that they can switch. Then for higher current AC applications they are used as pilot devices in opto-couplers to switch larger more conventional thyristors.
Photovoltaic Cells.
The most common type of photovoltaic light sensor is the Solar Cell. Solar cells convert light energy directly into DC electrical energy in the form of a voltage or current to a power a resistive load such as a light, battery or motor. Then photovoltaic cells are similar in many ways to a battery because they supply DC power.
However, unlike the other photo devices we have looked at above which use light intensity even from a torch to operate, photovoltaic solar cells work best using the suns radiant energy.
Solar cells are used in many different types of applications to offer an alternative power source from conventional batteries, such as in calculators, satellites and now in homes offering a form of renewable power.
Photovoltaic cells are made from single crystal silicon PN junctions, the same as photodiodes with a very large light sensitive region but are used without the reverse bias. They have the same characteristics as a very large photodiode when in the dark.
When illuminated the light energy causes electrons to flow through the PN junction and an individual solar cell can generate an open circuit voltage of about 0.58v (580mV). Solar cells have a “Positive” and a “Negative” side just like a battery.
Individual solar cells can be connected together in series to form solar panels which increases the output voltage or connected together in parallel to increase the available current. Commercially available solar panels are rated in Watts, which is the product of the output voltage and current (Volts times Amps) when fully lit.
Characteristics of a typical Photovoltaic Solar Cell.
The amount of available current from a solar cell depends upon the light intensity, the size of the cell and its efficiency which is generally very low at around 15 to 20%. To increase the overall efficiency of the cell commercially available solar cells use polycrystalline silicon or amorphous silicon, which have no crystalline structure, and can generate currents of between 20 to 40mA per cm2.
Other materials used in the construction of photovoltaic cells include Gallium Arsenide, Copper Indium Diselenide and Cadmium Telluride. These different materials each have a different spectrum band response, and so can be “tuned” to produce an output voltage at different wavelengths of light.
In this tutorial about Light Sensors, we have looked at several examples of devices that are classed as Light Sensors. This includes those with and those without PN-junctions that can be used to measure the intensity of light.
In the next tutorial we will look at output devices called Actuators. Actuators convert an electrical signal into a corresponding physical quantity such as movement, force, or sound. One such commonly used output device is the Electromagnetic Relay.
Accelerometer
Sensitive Axis
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Accelerometers are designed to detect inputs in reference to an axis; single-axis accelerometers can detect inputs only along one plane. Triaxial accelerometers can detect inputs in any plane.
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Dynamic Range
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Dynamic range refers to the maximum amplitude vibration that can be measured by an accelerometer before distortion occurs in the amplifier. It is normally specified in ‘g’s.
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Sensitivity
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Sensitivity refers to the ability of an accelerometer to detect motion. Sometimes referred to as the “scale factor” of the accelerometer, it is the ratio of the sensor’s electrical output to mechanical input. It is typically specified in terms of mV/g and it is valid only at one frequency (usually 100 Hz) and at particular temperature (25° C). This indicates the voltage output per g of acceleration
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Frequency Response
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The frequency response specification shows the maximum deviation of sensitivity over a frequency range. More appropriately known as amplitude response, it is the sensitivity specified over the transducer’s entire frequency range.
The frequency response is specified over a tolerance band; they are specified in percentage and/or dBs, typical bands being ±10%, ±1 dB or ±3 dB.
Upper frequency limit is typically governed primarily by the mechanical resonance of the sensor. Lower frequency limit appears because of “high pass” filtering used for reduction of the low frequency amplifier noise.
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Mounted Resonance Frequency
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This is the primary (largest) mechanical resonance of the sensor when mounted on the structure. At this frequency, accelerometer shows maximum sensitivity.
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Transverse Sensitivity
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Transverse sensitivity is the sensitivity of the accelerometer at 90 degrees to the sensitive axis of the sensor. Also referred to as cross-axis sensitivity, it is expressed as a percentage of the axial sensitivity. Ideally, it should be zero, but can be as much as 5%.
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Amplitude linearity
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Often referred to as amplitude non-linearity, amplitude linearity is a measure of how linear the output of an accelerometer is over its specified amplitude range.
Amplitude linearity specifies the limits to how far the
accelerometer’s output will differ from the perfect linearity. Again, amplitude linearity is only valid at a (usually undisclosed) single frequency.
It is specified as percentage of reading; sometimes expressed in a piecewise manner also.
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Output polarity
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Output polarity describes the direction of the accelerometer’s output signal (whether it is positive or negative going), given a particular direction of the input acceleration.
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Electronic Noise
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This is the electronic noise generated by the amplifier circuit. Noise is specified as either “broadband”, or “spectral”. The broadband measurement is a measurement of the total noise energy over a specified bandwidth. Spectral noise is the noise measured at a specific frequency.
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Size and Mass
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Size and mass of an accelerometer can change the characteristics of the object being tested. The mass of the accelerometers should be significantly smaller than
the mass of the system on which measurement is to be done.
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